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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2258A DESCRIPTION With TO-126 package High transition frequency fT High collector-emitter voltage VCEO APPLICATIONS High voltage general amplifier TV video output amplifier PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector- emitter voltage Emitter-base voltage Collector current INCH GE S AN EMIC Open emitter Open base Open collector CONDITIONS OND TOR UC VALUE 300 300 7 0.1 0.15 1.2*1 UNIT V V V A A Collector current-peak PC Collector power dissipation TC=25ae 4* 2 W Tj Tstg Junction temperature Storage temperature -55 150 +150 ae ae Note :*1: Without heat sink *2: With a 100 A 100 A 2 mm A1 heat sink Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2258A CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN TYP. MAX UNIT SYMBOL ICER Collector cutoff current VCE=250V;RBE=100k| 100 |I A V(BR)EBO VCEsat Emitter-base breakdown voltage IE=0.1mA ;IC=0 IC=50mA ;IB=5m A 7 V Collector-emitter saturation voltage 1.2 V VBE Base-emitter voltage IC=40mA ; VCE=20V 1.2 V hFE-1 DC current gain IC=40mA ; VCE=20V 40 hFE-2 DC current gain IC=5mA ; VCE=50V 30 COB Output capacitance fT Transition frequency IE=0; VCB=50V;f=1MHz IE=-10mA ; VCE=10V HAN INC SEM GE OND IC TOR UC 100 3 4.5 pF MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2258A SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions 3 |
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